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Shadowing and mask opening effects during selective-area vapor-liquid-solid growth of InP nanowires by metalorganic molecular beam epitaxy

Identifieur interne : 000553 ( Main/Repository ); précédent : 000552; suivant : 000554

Shadowing and mask opening effects during selective-area vapor-liquid-solid growth of InP nanowires by metalorganic molecular beam epitaxy

Auteurs : RBID : Pascal:14-0019330

Descripteurs français

Pascal (Inist)
- Aire sélective, Croissance cristalline en phase vapeur, Semiconducteur III-V, Composé III-V, Nanofil, Nanomatériau, Méthode MOMBE, Epitaxie jet moléculaire, Phosphure d'indium, Synthèse nanomatériau, Taux croissance, Réseau(arrangement), Précurseur, Mécanisme croissance, InP, 8107V, 8107B, 8116.

English descriptors

KwdEn :
- Arrays, Crystal growth from vapors, Growth mechanism, Growth rate, III-V compound, III-V semiconductors, Indium phosphide, MOMBE method, Molecular beam epitaxy, Nanomaterial synthesis, Nanostructured materials, Nanowires, Precursor, Selective area.

Abstract

Indium phosphide nanowires were grown by metalorganic molecular beam epitaxy using the selective-area vapor-liquid-solid method. We show experimentally and theoretically that the size of the annular opening around the nanowire has a major impact on nanowire growth rate. In addition, we observed a considerable reduction of the growth rate in dense two-dimensional arrays, in agreement with a calculation of the shadowing of the scattered precursors. Due to the impact of these effects on growth, they should be considered during selective-area vapor-liquid-solid nanowire epitaxy.

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Pascal:14-0019330

Le document en format XML

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<author><name sortKey="Kelrich, A" uniqKey="Kelrich A">A. Kelrich</name>
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<author><name sortKey="Calahorra, Y" uniqKey="Calahorra Y">Y. Calahorra</name>
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<author><name sortKey="Greenberg, Y" uniqKey="Greenberg Y">Y. Greenberg</name>
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<author><name sortKey="Gavrilov, A" uniqKey="Gavrilov A">A. Gavrilov</name>
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<author><name sortKey="Ritter, D" uniqKey="Ritter D">D. Ritter</name>
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<date when="2013">2013</date>
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<seriesStmt><idno type="ISSN">0957-4484</idno>
<title level="j" type="abbreviated">Nanotechnology : (Bristol, Print)</title>
<title level="j" type="main">Nanotechnology : (Bristol. Print)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arrays</term>
<term>Crystal growth from vapors</term>
<term>Growth mechanism</term>
<term>Growth rate</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium phosphide</term>
<term>MOMBE method</term>
<term>Molecular beam epitaxy</term>
<term>Nanomaterial synthesis</term>
<term>Nanostructured materials</term>
<term>Nanowires</term>
<term>Precursor</term>
<term>Selective area</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Aire sélective</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Nanofil</term>
<term>Nanomatériau</term>
<term>Méthode MOMBE</term>
<term>Epitaxie jet moléculaire</term>
<term>Phosphure d'indium</term>
<term>Synthèse nanomatériau</term>
<term>Taux croissance</term>
<term>Réseau(arrangement)</term>
<term>Précurseur</term>
<term>Mécanisme croissance</term>
<term>InP</term>
<term>8107V</term>
<term>8107B</term>
<term>8116</term>
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<front><div type="abstract" xml:lang="en">Indium phosphide nanowires were grown by metalorganic molecular beam epitaxy using the selective-area vapor-liquid-solid method. We show experimentally and theoretically that the size of the annular opening around the nanowire has a major impact on nanowire growth rate. In addition, we observed a considerable reduction of the growth rate in dense two-dimensional arrays, in agreement with a calculation of the shadowing of the scattered precursors. Due to the impact of these effects on growth, they should be considered during selective-area vapor-liquid-solid nanowire epitaxy.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Shadowing and mask opening effects during selective-area vapor-liquid-solid growth of InP nanowires by metalorganic molecular beam epitaxy</s1>
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<fA11 i1="01" i2="1"><s1>KELRICH (A.)</s1>
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<fA11 i1="02" i2="1"><s1>CALAHORRA (Y.)</s1>
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<fA11 i1="03" i2="1"><s1>GREENBERG (Y.)</s1>
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<fA11 i1="04" i2="1"><s1>GAVRILOV (A.)</s1>
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<fA11 i1="05" i2="1"><s1>COHEN (S.)</s1>
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<fA11 i1="06" i2="1"><s1>RITTER (D.)</s1>
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<fA14 i1="01"><s1>Electrical Engineering Faculty, Technion-Israel Institute of Technology</s1>
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<fC01 i1="01" l="ENG"><s0>Indium phosphide nanowires were grown by metalorganic molecular beam epitaxy using the selective-area vapor-liquid-solid method. We show experimentally and theoretically that the size of the annular opening around the nanowire has a major impact on nanowire growth rate. In addition, we observed a considerable reduction of the growth rate in dense two-dimensional arrays, in agreement with a calculation of the shadowing of the scattered precursors. Due to the impact of these effects on growth, they should be considered during selective-area vapor-liquid-solid nanowire epitaxy.</s0>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>14</s5>
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<s5>14</s5>
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<fC03 i1="15" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>46</s5>
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<fC03 i1="16" i2="3" l="FRE"><s0>8107V</s0>
<s4>INC</s4>
<s5>71</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>8116</s0>
<s4>INC</s4>
<s5>73</s5>
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<fN21><s1>020</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
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Shadowing and mask opening effects during selective-area vapor-liquid-solid growth of InP nanowires by metalorganic molecular beam epitaxy

Shadowing and mask opening effects during selective-area vapor-liquid-solid growth of InP nanowires by metalorganic molecular beam epitaxy

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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